Buried refractive microlenses formed by selective oxidation of AlGaAs
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چکیده
منابع مشابه
EBSD Measurement of Strains in GaAs due to Oxidation of Buried AlGaAs Layers
We have characterized elastic strain fields associated with the wet-thermal oxidation of buried AlxGa1-xAs (x ~ 0.98) layers of thickness 80 nm, situated between GaAs layers of thickness 200 nm, on a GaAs substrate. The compressive strains accompanying oxidation can exceed 6% and may lead to interlayer delamination or fracture. Automated electron backscatter diffraction measurements were perfor...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 1996
ISSN: 0013-5194
DOI: 10.1049/el:19960887